Australia markets open in 7 hours 13 minutes

Everspin Technologies, Inc. (MRAM)

NasdaqGM - NasdaqGM Real-time price. Currency in USD
Add to watchlist
6.15+0.03 (+0.49%)
As of 12:46PM EDT. Market open.
Full screen
Trade prices are not sourced from all markets
Previous close6.12
Open6.10
Bid6.11 x 300
Ask6.19 x 100
Day's range6.10 - 6.21
52-week range6.03 - 10.50
Volume24,270
Avg. volume125,000
Market cap132.355M
Beta (5Y monthly)0.99
PE ratio (TTM)16.62
EPS (TTM)N/A
Earnings dateN/A
Forward dividend & yieldN/A (N/A)
Ex-dividend dateN/A
1y target estN/A
  • Business Wire

    EY Announces Sanjeev Aggarwal of Everspin Technologies as an Entrepreneur Of The Year® 2024 Pacific Southwest Award Finalist

    CHANDLER, Ariz., May 07, 2024--Ernst & Young LLP (EY US) today announced that President and CEO Sanjeev Aggarwal of Everspin Technologies was named an Entrepreneur Of The Year® 2024 Pacific Southwest Award finalist. Now in its 38th year, Entrepreneur Of The Year is the preeminent competitive business award for audacious leaders who disrupt markets, revolutionize sectors and have a transformational impact on lives. Over the past four decades, the program has recognized the daring entrepreneurs wi

  • Business Wire

    Everspin Reports Unaudited First Quarter 2024 Financial Results

    CHANDLER, Ariz., May 01, 2024--Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of magnetoresistive random access memory (MRAM) persistent memory solutions, today announced preliminary unaudited financial results for the first quarter ended March 31, 2024.

  • Business Wire

    Next-Generation IBM FlashCore Modules Feature Everspin's PERSYST 1 Gigabit STT-MRAM, Enhancing Reliability

    CHANDLER, Ariz., April 30, 2024--Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions, today announced that IBM has chosen the PERSYST EMD4E001G 1Gb STT-MRAM for use in their FlashCore Module 4. The EMD4E001G, a high-performance persistent memory, ensures critical data integrity even during power loss. With a DDR4 interface, it delivers 2.7 gigabytes/second of both read and write ban